isocom components ltd unit 25b, park view road west, park v iew industrial estate, brenda road hartlepool, cleveland, ts25 1yd tel: (01429) 863609 fax :(01429) 863581 31/3/03 db92442m-aas/a6 0.26 20.32 19.32 3.35 4.0 3.0 0.5 7.62 13 max 7.0 6.0 2.54 1.2 0.5 3.0 1.2 3.0 4.0 3.0 3.35 7.0 6.0 0.5 0.5 7.62 1 2 4 3 0.26 13 max 2.54 3.0 10.16 9.16 3.35 7.0 6.0 7.62 1.2 13 max 0.5 0.26 2.54 1 2 3 7 8 15 10 9 low input current photodarlington optical ly coupled isol ators appro vals l ul recognised, file no. e91231 ' x' specific ation appro vals l vde 0884 in 3 available lead form : - - std - g form - smd approved to cecc 00802 ll certified to en60950 by the following test bodies :- nemko - certificate no. p01102465 fimko - certificate no. fi18162 semko - reference no. 0202041/01-25 demko - certificate no. 311161-01 ll bsi approved - certificate no. 8001 description the isp815-3,-2,-1, isp825-3,-2,-1, isp845-3,-2,-1 series of optically coupled isolators consist of infrared light emitting diodes and npn silicon photodarlingtons in space efficient dual in line plastic packages. fe atures l options :- 10mm lead spread - add g after part no. surface mount - add sm after part no. tape&reel - add smt&r after part no. l low input current 0.25ma i f l high currenttransfer ratio (200% min) l high isolation v oltage (5.3kv rms ) l high bv ceo (70v min) l all electrical parameters 100% tested l custom electrical selections available applic ations l computer terminals l industrial systems controllers l measuring instruments l signal transmission between systems of different potentials and impedances dimensions in mm 5.08 4.08 1 2 3 4 8 4.0 3.0 0.5 16 4 13 6 11 5 12 14 6 5 7 isp815x3,2,1 isp815-3,2,1 isp825x3,2,1 isp825-3,2,1 isp845x3,2,1 isp845-3,2,1 isp815x,isp825x,isp845x3,2,1 isp815,isp825,isp845-3,-2,-1 option g 7.62 surface mount option sm 10.16 0.26 10.46 9.86 0.6 0.1 1.25 0.75
db92442m-aas/a6 parameter min typ max units test condition input forward voltage (v f ) 1.2 1.4 v i f = 20ma reverse current (i r ) 10 m a v r = 4v output collector-emitter breakdown (bv ceo ) 70 v i c = 1ma ( note 2 ) emitter-collector breakdown (bv eco ) 6 v i e = 100 m a collector-emitter dark current (i ceo ) 100 na v ce = 20v coupled current transfer ratio (ctr) (note 2 ) isp815-3, isp825-3, isp845-3 200 % 0.25ma i f , 1.0v v ce 400 % 0.5ma i f , 1.0v v ce 800 % 1.0ma i f , 1.0v v ce . isp815-2, isp825-2, isp845-2 400 % 0.5ma i f , 1.0v v ce 800 % 1.0ma i f , 1.0v v ce isp815-1, isp825-1, isp845-1 800 % 1.0ma i f , 1.0v v ce collector-emitter saturation voltage -3 1.0 v 0.25ma i f , 0.5ma i c -2 1.0 v 0.5ma i f , 2ma i c -1 1.0 v 1.0ma i f , 8ma i c input to output isolation voltage v iso 5300 v rms see note 1 input-output isolation resistance r iso 5x10 10 w v io = 500v (note 1) output rise time tr 60 300 m s v ce = 2v , output fall time tf 53 250 m s i c = 10ma,r l = 100 w 31/3/03 electrical characteristics ( t a = 25c unless otherwise noted ) note 1 measured with input leads shorted together and output leads shorted together. note 2 special selections are available on request. please consult the factory. absolute maximum ratings (25c unless otherwise specified) storage temperature -55c to + 125c operating temperature -30c to + 100c lead soldering temperature (1/16 inch (1.6mm) from case for 10 secs) 260c input diode forward current 50ma reverse voltage 6v power dissipation 70mw output transistor collector-emitter voltage bv ceo 70v emitter-collector voltage bv eco 6v power dissipation 150mw power dissipation total power dissipation 200mw (derate linearly 2.67mw/ c above 25c)
db92442m-aas/a6 31/3/03 50 -30 0 25 50 75 100 125 ambient temperature t a ( c ) 150 0 200 ambient temperature t a ( c ) collector power dissipation p c (mw) 60 30 20 10 0 40 50 -30 0 25 50 75 100 125 collector power dissipation vs. ambient temperature forward current vs. ambient temperature -30 0 25 50 75 100 ambient temperature t a ( c ) collector-emitter saturation voltage v ce(sat) (v) collector-emitter saturation voltage vs. ambient temperature 100 0 6 10 0 0.2 0.4 0.6 0.8 1.0 1.2 forward current i f (ma) collector current vs. collector-emitter voltage 0 0.5 1.0 1.5 0 1 2 3 4 5 4 2 8 collector-emitter voltage v ce ( v ) collector current i c (ma) relative current transfer ratio vs. ambient temperature relative current transfer ratio i f = 1ma v ce = 1v -30 0 25 50 75 100 ambient temperature t a ( c ) current transfer ratio vs. forward current forward current i f (ma) current transfer ratio ctr (%) 0 400 600 800 1000 0.1 0.2 0.5 1 2 5 1200 200 v ce = 1v t a = 25 c t a = 25c i f = 1.0ma i f = 0.25ma i f = 1ma i c = 8ma i f = 0.5ma
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